The G-ray latenium™ Monolithic Detector

will offer SIGNIFICANTLY higher spatial resolution with much reduced radiation doses.

G-ray’s competitive advantage is based on three breakthrough technologies defining the unique architecture its latenium™ detector: (i) covalent low-temperature semiconductor bonding between the absorber and the readout wafers which does not harm the electronics of the readout wafer, thus enabling direct analog-to-digital signal conversion, (ii) a specific combination of semiconductor alloy grown by epitaxy that defines, by its composition and thickness, the sensitivity of the absorption layer and thus the target application (infrared, low or high-energy X-ray, high-energy physics), and (iii) a smart CMOS readout electronics designed for fast signal processing, storage and post-processing.

Increase in resolution and contrast

SHARPER IMAGES
ENHANCED INSPECTION SYSTEMS

Lower dose procedure

LONGER-LIVED DETECTORS
BEST COMPLIANCE PRODUCTS

Energy discrimination

COLORED IMAGES
DETECT DIFFERENT MATERIALS

No special cooling

Lower maintenance cost

Higher speed

REAL-TIME IMAGING
IN-LINE CT SYSTEMS

Light weighted detector

PORTABLE

The latenium™ detector first demonstrator will be ready by end of 2018

THE DETECTOR EXPLAINED


G-ray’s core product is a monolithic (= no bump-bonding) CMOS integrated pixel array detector, using a digital direct conversion mode.
This digital direct conversion mode :

(1) minimises image blurring
(2) allows energy discrimination
(3) permits high speed readout
(4) lowers dose procedures

IT RELIES ON


  •  a combination of materials that define the sensitivity of the absorption layers,
  • smart electronics for signal processing, storage and post-processing,
  • a low temperature direct bonding technology without the need of any special high-temperature metallization layers.

Through the combination of the best available technologies, this new type of sensor has unique advantages in terms of spatial, energy and temporal resolution over all present bump-bonded detectors based on planar Si, CdTe or CdZnTe absorbers, as well as the monolithically integrated Si absorbers.

G-ray’s equipment permits space-filling arrays of tall germanium crystals to be synthesized, acting as pixel sensor.

G-ray’s monolithic X-ray photon imaging detector with one ASIC wafer, using Wafer-to-Wafer direct bonding without middle TSVs.

PCT Application number: IB2015/002385 | Inventor: Hans von Känel | Applicant: G-ray Switzerland SA
Title: Monolithic CMOS integrated pixel detector, and systems and methods for particle detection and imaging including various applications