G-ray presents its latenium™ technology at the 15th Vienna Conference on Instrumentation

Towards wafer-scale monolithic CMOS integrated pixel detectors for X-ray photon counting Hauterive, Neuchatel, 21 February 2019 A new semiconductor…

New patent filed (5)

US Patent and Trademark Office acknowledged receipt of the following provisional patent application: Application number: US 62/381,647 Inventor: Hans…

Low temperature direct bonding process

The G-ray team has defined a direct bonding process at low temperature allowing an efficient charge collection across bonded semiconductor wafers.…

New patent filed (4)

US Patent and Trademark Office acknowledged receipt of the following provisional patent application: Application number: US 62/334,514 Inventor: Hans…

New patent filed (3)

US Patent and Trademark Office acknowledged receipt of the following provisional patent application: Application number: US 62/295,720 Inventor: Hans…

Proof of concept

The G-ray team could achieve an efficient charge collection across bonded interfaces. By demonstrating the validity of this effect, the company is…

CERN collaboration

In addition to its CTI funding application, G-ray entered in a collaboration with CERN to characterize a new low temperature direct bonding of…

CTI support

The Commission for Technology and Innovation approved G-ray’s funding application. The Pixisens project supports the development of low temperature…